Impact of Hydrogen Impurities on Electron Donors in Zinc Oxide

Oxide materials require high dopant activation for applications and may be easily contaminated by hydrogen impurities. In this work, the dynamics of substitutionals in zinc oxide, both predicted measured, are presented ascertaining that can act to remove free carriers added electron donors, such as aluminum. This is spite evidence itself an donor. Flow-limited field-injection electrostatic spraying was used deposit aluminum-doped oxide films solution phase. A Schottky diode fabricated measure capacitance versus voltage characteristics films, revealing as-deposited carrier concentrations. Thus-obtained conductivities were good agreement with simulation results based on a defect model. Upon exposure moisture, displayed persistent photoconductivity indicating incorporation, dark conductivity accordingly decreased below films.